Lifetime shortening in doped ZnS nanophosphors
Lifetime shortening in doped ZnS nanophosphors
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DOI：
10.1088/0022-3727/39/9/008
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发表时间：
2006-05-07
影响因子：
3.4
通讯作者：
Manzoor, K.
中科院分区：
文献类型：
--
作者：
Bhatti, H. S.;Sharma, Rajesh;Manzoor, K.
采用胶体沉淀法，以聚乙烯吡咯烷酮为封盖剂，在ZnS: Mn纳米荧光粉中掺杂淬灭剂杂质Ni。x射线衍射和透射电镜研究证实了类似2.5 nm大小的纳米颗粒的形成。研究了合成的纳米荧光粉在室温下的能量分辨和时间分辨光致发光光谱。ZnS: Mn、Ni的光致发光光谱在412 nm、433 nm和590 nm处出现三个峰，分别对应Ni杂质、硫化物空位（Vs）和Mn杂质。ZnS: Mn纳米荧光粉的缺陷发射寿命为纳秒级，Mn杂质发射寿命为毫秒级。然而，随着掺杂浓度的变化，ZnS: Mn， Ni样品的寿命缩短，这与缺陷相关（420 nm）和杂质相关（590 nm）的发射有关，这归因于Mn2+与最邻近的Ni2+杂质之间的交换相互作用。
ZnS: Mn nanophosphor has been doped with quencher impurity Ni using the colloidal precipitation method with capping agent polyvinyl pyrrolidone. The formation of similar to 2.5 nm sized nanoparticles has been confirmed by x-ray diffraction and transmission electron microscope studies. Energy and time resolved photoluminescence spectra of the synthesized nanophosphors have been studied at room temperature. Photoluminescent spectra for ZnS: Mn, Ni show three peaks at 412 nm, 433 nm and 590 nm corresponding to Ni impurity, sulphide vacancies (Vs) and Mn impurity, respectively. The ZnS: Mn nanophosphor show typical nanosecond lifetimes for defect-related emission and millisecond lifetimes for Mn impurity-related emission. However, the ZnS: Mn, Ni samples showed lifetime shortening, with variation of dopant concentration for defect-related (420 nm) as well as impurity-related emission (590 nm), which is attributed to exchange interaction between Mn2+ and nearest neighbour Ni2+ impurities.