Improvement of Ferroelectricity in Ce-Doped Hf0.5Zr0.5O2 Thin Films
Improvement of Ferroelectricity in Ce-Doped Hf0.5Zr0.5O2 Thin Films
复制标题
DOI：
10.3390/coatings12111766
复制
发表时间：
2022-11
期刊：
影响因子：
3.4
通讯作者：
Yong-Guang Xiao;Sitao Liu;Li-Sha Yang;Yong Jiang;K. Xiong;Gang Li;J. Ouyang;M. Tang
中科院分区：
文献类型：
--
作者：
Yong-Guang Xiao;Sitao Liu;Li-Sha Yang;Yong Jiang;K. Xiong;Gang Li;J. Ouyang;M. Tang
目前，离子掺杂是一种常用的调节Hf0.5Zr0.5O2薄膜铁电性能的方法。采用化学溶液沉积法（CSD）在Pt/TiN/SiO2/Si衬底上制备了Ce（铈）掺杂Hf0.5Zr0.5O2（Ce：HZO）薄膜。研究了Ce掺杂HZO薄膜的微结构和铁电性能。实验结果表明，Ce掺杂浓度为7mol%时，薄膜的反射极化值达到了17 μC/cm 2，与未掺杂的Hf 0. 5 Zr 0. 5 O2薄膜相比有了显著的提高。其原因可能是铈离子的引入，它可以引入一定数量的氧空位，从而稳定正交相的形成。有趣的是，在109次测试循环后，膜显示出几乎无疲劳。这些结果表明，铈离子掺杂是稳定HZO薄膜正交相形成，提高HZO薄膜铁电性的有效方法。
At present, ion doping is a popular method typically used to regulate the ferroelectric properties of Hf0.5Zr0.5O2 films. In this work, Ce (cerium)–doped Hf0.5Zr0.5O2 (Ce: HZO) films on Pt/TiN/SiO2/Si substrates were prepared by the chemical solution deposition (CSD) method. The microstructure and ferroelectric properties of the Ce–doped HZO films were investigated in detail. The experimental results showed that the remanent polarization value of the films with cerium doping concentration of 7 mol% reached 17 μC/cm2, which is a significant improvement compared with the undoped Hf0.5Zr0.5O2 films. The reason for this may be the introduction of cerium ions, which can introduce a certain number of oxygen vacancies, thus stabilizing the formation of the orthogonal phase. Interestingly, the films were shown to be nearly fatigue free after 109 cycles of testing. These results demonstrate that cerium ion doping is an effective method for stabilizing the formation of the orthogonal phase of HZO films, and improving the ferroelectricity of HZO thin films.