Microstructure, electrical and magnetic properties of Ce-doped BiFeO3 thin films
Microstructure, electrical and magnetic properties of Ce-doped BiFeO3 thin films
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DOI：
10.1063/1.3000478
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发表时间：
2008-10
影响因子：
3.2
通讯作者：
Z. Quan;Wei Liu-;Hao Hu;Sheng Xu;Bobby Sebo;G. Fang;Meiya Li;Xingzhong Zhao
中科院分区：
文献类型：
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作者：
Z. Quan;Wei Liu-;Hao Hu;Sheng Xu;Bobby Sebo;G. Fang;Meiya Li;Xingzhong Zhao
通过溶胶-凝胶技术分别在 Pt/TiN/Si3N4/Si 和氟掺杂 SnO2 玻璃基板上沉积 Bi1−xCexFeO3 (x=0、0.05、0.1、0.15 和 0.20) (BCFO) 薄膜。研究了Ce掺杂对BCFO薄膜微观结构、电学和磁学性能的影响。与 BiFeO3 (BFO) 薄膜相比，Bi0.8Ce0.2FeO3 薄膜的拟合 Bi 4f7/2、Bi 4f5/2、Fe 2p3/2、Fe 2p1/2 和 O 1s 峰分别向更高结合能区域移动 0.33、0.29、0.43、0.58 和 0.49 eV。 Bi0.8Ce0.2FeO3 薄膜的 2-4 cm−1 拉曼红移和较短的声子寿命可能与扭曲氧八面体中 Bi-O、Ce-O、(Bi, Ce)-O 和 Fe-O 键之间的非和谐相互作用有关。与纯材料相比，由于稳定的氧八面体减少了氧空位，Bi0.8Ce0.2FeO3 薄膜的介电和铁电性能得到了改善。 BFO 和 Bi0.8Ce0.2FeO3 薄膜电容器的电流密度值为 9.89×10−4 并且...
Bi1−xCexFeO3 (x=0, 0.05, 0.1, 0.15, and 0.20) (BCFO) thin films were deposited on Pt/TiN/Si3N4/Si and fluorine-doped SnO2 glass substrates by sol-gel technique, respectively. The effect of Ce doping on the microstructure, electrical and magnetic properties of BCFO films was studied. Compared to counterparts of BiFeO3 (BFO) film, the fitted Bi 4f7/2, Bi 4f5/2, Fe 2p3/2, Fe 2p1/2, and O 1s peaks for Bi0.8Ce0.2FeO3 film shift toward higher binding energy regions by amounts of 0.33, 0.29, 0.43, 0.58, and 0.49 eV, respectively. Raman redshifts of 2–4 cm−1 and shorter phonon lifetimes for the Bi0.8Ce0.2FeO3 film might be related to anharmonic interactions among Bi–O, Ce–O, (Bi, Ce)–O, and Fe–O bonds in the distorted oxygen octahedron. Compared to the pure counterparts, the dielectric and ferroelectric properties of the Bi0.8Ce0.2FeO3 film are improved due to the decreased oxygen vacancies by the stabilized oxygen octahedron. Current density values for the BFO and Bi0.8Ce0.2FeO3 film capacitors are 9.89×10−4 and...