Tuning surface properties in photosensitive polyimide. Material design for high performance organic thin-film transistors
Tuning surface properties in photosensitive polyimide. Material design for high performance organic thin-film transistors
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DOI：
10.1039/c0jm00196a
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发表时间：
2010-01-01
影响因子：
--
通讯作者：
Chang, Ming-Hua
中科院分区：
文献类型：
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作者：
Chou, Wei-Yang;Kuo, Chia-Wei;Chang, Ming-Hua
合成了一种光敏聚酰亚胺（PSPI）作为有机薄膜晶体管（OTFTs）的栅极介质。提出了一种利用二氧化硅栅极电介质上的PSPI控制OTFT通道内电荷密度的方法。通过改变紫外光照射PSPI表面的剂量，可以调节栅极介质的表面能、表面载流子和电容，从而产生超高性能的五苯基otft，其平均场效应迁移率（mu）高于6.0 cm(2)/Vs。研究了PSPI薄膜的表面能与OTFT器件的mu值之间的关系。此外，栅极介电性能对并五苯薄膜结构性能的影响与薄膜的电学特性密切相关。接触角、x射线衍射、静电力显微镜和微拉曼光谱测量结果表明，来自PSPI薄膜的表面能和掺杂载流子在OTFT应用的并五苯薄膜的载流子输运中起着重要作用。
A photosensitive polyimide (PSPI) is synthesized to serve as the gate dielectric in organic thin-film transistors (OTFTs). A method to control the charge density within the channel of the OTFT using the PSPI on a silicon dioxide gate dielectric is proposed. The surface energy, surface carriers, and capacitance of gate dielectrics can be tuned by varying irradiation doses of UV light on the PSPI surface to create ultrahigh performance pentacene-based OTFTs with an average field-effect mobility (mu) of above 6.0 cm(2)/Vs. The correlation between the surface energy of the PSPI films and the mu value of OTFT devices is investigated. Moreover, the impact of gate-dielectric properties on the structural properties of pentacene films is closely related to the electrical characteristics of OTFTs. The results of contact angle, X-ray diffraction, electrostatic force microscopy, and micro-Raman spectroscopy measurements indicate that the surface energy and doping carriers coming from the PSPI film play important roles in the carrier transport of pentacene film for OTFT applications.