Domain-wall dynamics in translationally nonivariant nanowires: theory and applications.
Domain-wall dynamics in translationally nonivariant nanowires: theory and applications.
复制标题
平移非变量纳米线中的畴壁动力学：理论与应用。
DOI：
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发表时间：
2011
影响因子：
8.6
通讯作者：
A. Abanov
中科院分区：
文献类型：
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作者：
O. Tretiakov;Y. Liu;A. Abanov
我们将磁壁动力学推广到平移不变的铁磁纳米线的情况。所得到的运动方程通过考虑导线沿线的变化，如导线形状的无序或变化，使得对磁通-壁传播的描述更加真实。我们证明了有效的运动方程是非常普遍的，并且不依赖于模型的细节。作为它们应用的一个例子，我们详细考虑了沙漏形状的纳米带。横向磁化壁陷于中间，具有两个稳定的磁化方向。我们研究了在短电流脉冲作用下两个方向之间的切换。我们得到了切换磁化所需电流脉冲的精确时间依赖关系，每次切换的欧姆损耗最小。此外，我们还发现了每次开关的欧姆损耗与最佳电流脉冲的开关时间之间的关系。因此，我们表明，作为一种磁记忆设备，这种纳米设备的能效可能是最好的现代设备的10(5)倍。
We generalize domain-wall dynamics to the case of translationally noninvariant ferromagnetic nanowires. The obtained equations of motion make the description of the domain-wall propagation more realistic by accounting for the variations along the wire, such as disorder or change in the wire shape. We show that the effective equations of motion are very general and do not depend on the model details. As an example of their use, we consider an hourglass-shaped nanostrip in detail. A transverse domain wall is trapped in the middle and has two stable magnetization directions. We study the switching between the two directions by short current pulses. We obtain the exact time dependence of the current pulses required to switch the magnetization with the minimal Ohmic losses per switching. Furthermore, we find how the Ohmic losses per switching depend on the switching time for the optimal current pulse. As a result, we show that as a magnetic memory device this nanodevice may be 10(5) times more energy efficient than the best modern devices.