Yttrium Fluoride-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells
Yttrium Fluoride-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells
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用于晶体硅太阳能电池的氟化钇基电子选择性接触
DOI：
10.1021/acsaem.0c02646
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发表时间：
2021-03-10
影响因子：
6.4
通讯作者：
Shen, Hui
中科院分区：
文献类型：
--
作者：
Chen, Zhiming;Lin, Wenjie;Shen, Hui
无掺杂的载流子选择层的发展证明了克服由重掺杂引起的寄生吸收和掺杂相关的复合以在简化的过程中实现低复合电流密度（J（0 c））和低接触电阻（rho（c））的潜力。在这项工作中，热蒸发氟化钇（YF 3）薄膜被证明是电子选择性材料的c-Si太阳能电池。YF 3中间层具有3.1eV的低功函数，允许n-Si/YF 3/Al接触的最低ρ（c）为17.8m（2）。Omega.cm制备了基于YF 3的电子钝化接触的N型Si太阳能电池，效率达到20.8%，开路电压为645 mV，填充因子为80.8%。这预示着无掺杂YF 3电子接触在低温钝化接触太阳能电池中的潜在应用。
The development of dopant-free carrier-selective layer demonstrates the potential to overcome parasitic absorption and doping-related recombination caused by heavy doping to realize both low recombination current density (J(0c)) and low contact resistance (rho(c)) in simplified procedures. In this work, thermally evaporated yttrium fluoride (YF3) films were demonstrated as electron-selective material for c-Si solar cells. The YF3 interlayers have a low work function of 3.1 eV, allowing the lowest rho(c) of 17.8 m Omega.cm(2 )for the n-Si/YF3/Al contacts. N-type Si solar cells based on YF3 for electron-passivated contact were fabricated, reaching an efficiency of 20.8%, an open-circuit voltage of 645 mV, and a fill factor of 80.8%. This indicates the future potential application of dopant-free YF3 electron contact for low-temperature-passivated contact solar cells.