Progress in ZnO materials and devices
Progress in ZnO materials and devices
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DOI：
10.1007/s11664-006-0258-y
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发表时间：
2006-06-01
影响因子：
2.1
通讯作者：
Look, David C.
中科院分区：
文献类型：
--
作者：
Look, David C.
ZnO是一种宽带隙半导体材料，目前正在开发用于许多应用，包括紫外（UV）发光二极管，紫外光电探测器，透明薄膜晶体管和气体传感器。它可以生长成球、薄膜或许多类型和形状的纳米结构。然而，与任何有用的半导体材料一样，它的电学和光学特性受到杂质和缺陷的控制。在这里，我们考虑了各种重要的供体类型杂质，如H、Al、Ga和In，以及受体类型杂质，如N、P、as和Sb。我们还研究了一些常见点缺陷的影响，包括Zn间隙、Zn空位、O空位和它们的配合物。这里主要关注的实验技术包括温度依赖的霍尔效应和低温光致发光测量，因为它们单独可以提供供体和受体浓度和供体能量。本文还对p型氧化锌这一重要课题进行了较为详细的讨论。
ZnO is a wide-band-gap semiconductor material that is now being developed for many applications, including ultraviolet (UV) light-emitting diodes, UV photodetectors, transparent thin-film transistors, and gas sensors. It can be grown as boules, as thin films, or as nanostructures of many types and shapes. However, as with any useful semiconductor material, its electrical and optical properties are controlled by impurities and defects. Here, we consider various important donor-type impurities, such as H, Al, Ga, and In, and acceptor-type impurities, such as N, P, As, and Sb. We also examine the effects of a few common point defects, including Zn interstitials, Zn vacancies, O vacancies, and complexes of each. The main experimental techniques of interest here include temperature-dependent Hall-effect and low-temperature photoluminescence measurements, because they alone can provide donor and acceptor concentrations and donor energies. The important topic of p-type ZnO is also considered in some detail.