A Mathematical Model of Silicon Chemical Vapor Deposition Further Refinements and the Effects of Thermal Diffusion
A Mathematical Model of Silicon Chemical Vapor Deposition Further Refinements and the Effects of Thermal Diffusion
复制标题
硅化学气相沉积数学模型的进一步完善和热扩散的影响
DOI：
--
复制
发表时间：
1986
期刊：
影响因子：
--
通讯作者：
James A. Miller
中科院分区：
文献类型：
--
作者：
M. Coltrin;R. Kee;James A. Miller
我们描述了化学气相沉积（CVD）反应器中气相化学动力学和流体力学耦合的数学模型。本文提出了改进，我们早期的模型的CVD硅从硅烷。该模型预测了气相温度和速度场，十七种化学物质的浓度场和沉积速率。主要的新功能是一个多组分传输模型，包括热扩散和一个新的配方的边界条件，描述沉积。一个重要的结果是，热扩散预测作出重要贡献的物种密度分布，并普遍降低沉积速率。
We describe a mathematical model of the coupled gas‐phase chemical kinetics and fluid mechanics in a chemical vapor deposition (CVD) reactor. This paper presents refinements to our earlier model of the CVD of silicon from silane. The model predicts gas‐phase temperature and velocity fields, concentration fields for seventeen chemical species, and deposition rates. The major new features are a multicomponent transport model including thermal diffusion and a new formulation of the boundary conditions that describe deposition. A significant result is that thermal diffusion is predicted to make an important contribution to species density profiles and generally to reduce deposition rates.