Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy
Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy
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DOI：
10.1088/0268-1242/25/6/065009
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发表时间：
2010-05
影响因子：
1.9
通讯作者：
Z. Chine;H. Fitouri;I. Zaied;A. Rebey;B. El Jani
中科院分区：
文献类型：
--
作者：
Z. Chine;H. Fitouri;I. Zaied;A. Rebey;B. El Jani
利用光反射光谱和光致发光光谱研究了常压金属有机气相外延在p型GaAs衬底上生长并在不同温度下退火的GaAsBi层的光学性质。光反射光谱显示，随着退火温度的升高，GaAs0.965Bi0.035的带隙能没有明显变化，但在600℃时，带隙能达到最小值，对应于60 meV的红移。GaAsBi层的低温光致发光光谱显示出以~ 1.36 eV为中心的宽频带。1.36 eV发射带的温度依赖性以及该带随铋流动而增强的强度表明，它起源于Bi团簇或可能位于GaAsBi涂层表面/界面的复杂缺陷。
The optical properties of GaAsBi layers grown by atmospheric pressure metalorganic vapor phase epitaxy on p-type GaAs substrates and annealed at different temperatures are investigated by photoreflectance and photoluminescence spectroscopies. Photoreflectance spectra show no significant shift in the band gap energy of GaAs0.965Bi0.035 with annealing temperature except 600 °C for which the band gap energy reaches a minimum value corresponding to a red shift of 60 meV. The low temperature photoluminescence spectra of GaAsBi layers show a broad band centered at ∼1.36 eV. The temperature dependence of the 1.36 eV emission band in addition to the increasing intensity of this band with bismuth flow suggests that it is originated from Bi clusters or from complex defects probably located at the surface/interface of the GaAsBi epilayer.