ENHANCED PLASMA NITRIDING AT LOW-PRESSURES - A COMPARATIVE-STUDY OF DC AND RF TECHNIQUES
ENHANCED PLASMA NITRIDING AT LOW-PRESSURES - A COMPARATIVE-STUDY OF DC AND RF TECHNIQUES
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DOI：
10.1016/0257-8972(90)90140-8
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发表时间：
1990-06-01
影响因子：
5.4
通讯作者：
MATTHEWS, A
中科院分区：
文献类型：
--
作者：
LEYLAND, A;FANCEY, KS;MATTHEWS, A
随着工业对低压离子镀技术在表面涂层应用中的应用兴趣的增加，作者研究了放电增强对等离子体氮化工艺的适用性。从表面层生长速率、硬度分布和覆盖均匀性等方面讨论了各种直流二极管、三极管和射频系统的性能。结果表明，等离子体现象的预测方程与实际放电的视觉和光学发射光谱分析的相关性可以解释观测到的放电效应，从而有助于等离子体氮化工艺的开发和优化。
Increasing industrial interest in the use of enhanced low pressure ion plating techniques for surface coating applications led the authors to examine the applicability of discharge enhancement to the plasma nitriding process. The performance of various d.c. diode, triode and r.f. systems is discussed in terms of surface layer growth rate, hardness profiles and coverage uniformity. It is shown that a correlation of visual and optical emission spectroscopy analyses of practical discharges with predictive equations for plasma phenomena can be useful in explaining observed discharge effects, thus assisting development and optimization of the plasma nitriding process.