Reduced Leakage Current in BiFeO3 Thin Films on Si Substrates Formed by a Chemical Solution Method
Reduced Leakage Current in BiFeO3 Thin Films on Si Substrates Formed by a Chemical Solution Method
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DOI：
10.1143/jjap.44.l734
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发表时间：
2005-05
影响因子：
1.5
通讯作者：
S. Singh;H. Ishiwara
中科院分区：
文献类型：
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作者：
S. Singh;H. Ishiwara
采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备了BiFeO 3（BFO）薄膜。在氮气气氛中在550°C下退火5分钟足以获得结晶BFO膜。优化化学计量比BFO溶液的工艺条件后，BFO薄膜的漏电流密度显著降低。在室温下首次在BFO薄膜中观察到10- 8A/cm ~ 2的漏电流密度。这个范围是四个数量级低于报告的典型值在RT纯BFO膜。由于漏电流的改善，我们可以在室温和80 K下分别测量BFO薄膜的非饱和和饱和P-E（极化与电场）磁滞回线。在80 K下的饱和反射极化为90 µC/cm 2。
BiFeO3 (BFO) thin films were formed by depositing sol–gel solutions on Pt/Ti/SiO2/Si substrates. Five minute annealing in a nitrogen atmosphere at 550°C was sufficient to obtain crystalline BFO films. The leakage current density in BFO films was found to decrease markedly after optimizing the process conditions of stoichiometric BFO chemical solution. The leakage current density in the range of 10-8 A/cm2 was observed for the first time in BFO thin films at room temperature (RT). This range is four orders of magnitude lower than the reported typical value at RT in pure BFO films. Due to the improved leakage current, we could measure nonsaturated and saturated P–E (polarization vs electric field) hysteresis loops at respective RT and 80 K in the BFO films. The saturated remanent polarization at 80 K was 90 µC/cm2.