A 183 GHz Metamorphic HEMT Low-Noise Amplifier With 3.5 dB Noise Figure
A 183 GHz Metamorphic HEMT Low-Noise Amplifier With 3.5 dB Noise Figure
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噪声系数为 3.5 dB 的 183 GHz 变质 HEMT 低噪声放大器
DOI:
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发表时间:
2015
影响因子:
3
通讯作者:
Marie Genevieve
中科院分区:
文献类型:
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作者:
G. Moschetti;A. Leuther;H. Massler;B. Aja;M. Rosch;M. Schlechtweg;O. Ambacher;V. Kangas;Marie Genevieve
This letter presents a 183 GHz low-noise amplifier (LNA), designed primarily for water vapor detection in atmosphere. The LNA requirements were defined by MetOp Second Generation (MetOp-SG) Microwave Sounder, Microwave Imager and Ice Cloud Imager instruments. MetOp-SG is the European contribution to operational meteorological observations from polar orbit. This LNA advances the current state-of-the-art for the InGaAs metamorphic high electron mobility transistor (mHEMT) technology. The five-stage common-source MMIC amplifier utilizes transistors with a gate length of 50 nm. On-wafer measurements show a noise figure of 3.5 dB at the operative frequency, about 1 dB lower than previously reported mHEMT LNAs, and a gain of 24±2 dB over the bandwidth 160-200 GHz. The input and output matching are -11 dB and -10 dB, respectively. Moreover, the dc power dissipation at the optimal bias for noise is as low as 24 mW.