Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes
Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes
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DOI：
10.1063/1.4994648
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发表时间：
2017-07-21
影响因子：
3.2
通讯作者：
Feezell, D.
中科院分区：
文献类型：
--
作者：
Rashidi, A.;Nami, M.;Feezell, D.
本工作描述了一种小信号微波方法，用于确定差分载流子寿命和输运效应的电注入InGaN/GaN发光二极管（LED）。通过考虑载流子的扩散、俘获、电子逃逸和复合，利用速率方程推导出LED的等效小信号电路，并由此得到输入阻抗和调制响应的表达式。该表达式同时拟合的非极性InGaN/GaN微发光二极管的输入阻抗和调制响应的自支撑GaN衬底上的实验数据。拟合用于提取与传输相关的电路参数和差分载流子寿命。的依赖性的参数上的设备直径和电流密度的报告。我们还推导出低和高注入水平下的调制响应的近似值，并表明载流子的传输会影响器件的调制响应，特别是在低注入水平下。所提出的方法是相关的高速LED可见光通信的设计。出版社：AIP Publishing
This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from which expressions for the input impedance and modulation response are obtained. The expressions are simultaneously fit to the experimental data for the input impedance and modulation response for nonpolar InGaN/GaN micro-LEDs on free-standing GaN substrates. The fittings are used to extract the transport related circuit parameters and differential carrier lifetimes. The dependence of the parameters on the device diameter and current density is reported. We also derive approximations for the modulation response under low and high injection levels and show that the transport of carriers affects the modulation response of the device, especially at low injection levels. The methods presented are relevant to the design of high-speed LEDs for visible-light communication. Published by AIP Publishing.