Faraday cage angled-etching of nanostructures in bulk dielectrics
Faraday cage angled-etching of nanostructures in bulk dielectrics
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体电介质中纳米结构的法拉第笼成角度蚀刻
DOI：
10.1116/1.4944854
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发表时间：
2016
影响因子：
1.4
通讯作者：
Marko Lonvcar
中科院分区：
文献类型：
--
作者：
P. Latawiec;M. Burek;Young;Marko Lonvcar
对于许多新兴的光电子材料，异质外延生长技术不能提供与体单晶生长相同的高材料质量。然而，对纳米级的光学、电学或机械隔离的需求通常需要使用不同的衬底，有源器件层位于该衬底上。法拉第笼倾斜蚀刻（FCAE）通过倾斜蚀刻工艺实现原位器件释放和隔离，从而避免了对这些平面薄膜技术的需要。通过在感应耦合等离子体反应离子蚀刻期间将法拉第笼放置在样品周围，蚀刻等离子体在笼表面处形成等电位，将离子垂直于其表面引导。在这篇文章中，法拉第笼角，网格尺寸，和样品放置的蚀刻角度，均匀性和掩模选择性的影响进行了研究内的硅蚀刻平台。模拟结果定性地证实了实验，并有助于澄清工作中的物理机制。这些结果将有助于指导FCAE工艺设计在广泛的材料平台。
For many emerging optoelectronic materials, heteroepitaxial growth techniques do not offer the same high material quality afforded by bulk, single-crystal growth. However, the need for optical, electrical, or mechanical isolation at the nanoscale level often necessitates the use of a dissimilar substrate, upon which the active device layer stands. Faraday cage angled-etching (FCAE) obviates the need for these planar, thin-film technologies by enabling in situ device release and isolation through an angled-etching process. By placing a Faraday cage around the sample during inductively coupled plasma reactive ion etching, the etching plasma develops an equipotential at the cage surface, directing ions normal to its face. In this article, the effects that Faraday cage angle, mesh size, and sample placement have on etch angle, uniformity, and mask selectivity are investigated within a siliconetching platform. Simulation results qualitatively confirm experiments and help to clarify the physical mechanisms at work. These results will help guide FCAE process design across a wide range of material platforms.