Efficient field emission from vertically grown planar ZnO nanowalls on an ITO–glass substrate
Efficient field emission from vertically grown planar ZnO nanowalls on an ITO–glass substrate
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DOI：
10.1088/0957-4484/19/03/035603
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发表时间：
2008-01
期刊：
影响因子：
3.5
通讯作者：
D. Pradhan;M. Kumar;Y. Ando;K. Leung
中科院分区：
文献类型：
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作者：
D. Pradhan;M. Kumar;Y. Ando;K. Leung
垂直生长的平面 ZnO 纳米墙的典型尺寸为 40-80 nm 厚，几微米宽，在 70 °C 下电沉积在氧化铟锡 (ITO)-玻璃基板上。 X 射线光电子能谱 (XPS) 研究表明，纳米墙由覆盖有 Zn(OH)2 覆盖层的 ZnO 组成。 X 射线衍射 (XRD) 研究表明，这些纳米墙具有纤锌矿结构并且高度结晶。相应的拉曼光谱和光致发光光谱进一步表明缺氧的存在。这些ZnO纳米墙表现出优异的场发射性能，与迄今为止报道的大多数ZnO纳米线和其他一维纳米结构相比，不仅具有显着较低的3.6 V µm−1（0.1 µA cm−2）的开启场，而且在6.6 V µm−1时具有更高的0.34 mA cm−2的电流密度。
Vertically grown planar ZnO nanowalls, with typical dimensions of 40–80 nm thickness and several micrometers wide, were electrodeposited on an indium–tin-oxide (ITO)–glass substrate at 70 °C. X-ray photoelectron spectroscopy (XPS) studies reveal that the nanowalls consist of ZnO covered with a Zn(OH)2 overlayer. An x-ray diffraction (XRD) study shows that these nanowalls have the wurtzite structure and are highly crystalline. The corresponding Raman and photoluminescence spectra further indicate the presence of oxygen deficiency. These ZnO nanowalls exhibit excellent field emission performance, with not only a considerably lower turn-on field of 3.6 V µm−1 (at 0.1 µA cm−2) but also a higher current density of 0.34 mA cm−2 at 6.6 V µm−1 than most ZnO nanowires and other one-dimensional nanostructures reported to date.