High growth rate GaN films using a modified electron cyclotron resonance plasma source
High growth rate GaN films using a modified electron cyclotron resonance plasma source
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使用改进的电子回旋共振等离子体源的高生长速率 GaN 薄膜
DOI：
10.1116/1.581423
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
A. Bensaoula
中科院分区：
文献类型：
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作者：
I. Berishev;E. Kim;A. Bensaoula
GaN薄膜通过反应性分子束外延方法用改进的ASTeX®紧凑型电子回旋共振（ECR）氮等离子体源沉积。研究了不同ECR出射孔径对GaN薄膜生长速率和光致发光特性的影响。孔径为1.6 mm的孔矩阵允许GaN薄膜在高达1 μ m/h的生长速率下具有良好的光学性能。较大直径的微结构导致半绝缘膜。室温下的光致发光的未掺杂和Si掺杂的GaN薄膜的半高宽小于100毫电子伏已获得在最高的生长速率。我们建议，这样的孔径有效地阻止高能离子到达衬底，从而减少离子损伤，再溅射，并增加Ga表面人口。它还在ECR谐振器内部产生更高的压力，因此提供更高的活性物质通量。虽然进一步的优化将导致更好的GaN薄膜质量，我们的...
GaN thin films were deposited by reactive molecular beam epitaxy method with a modified ASTeX® compact electron cyclotron resonance (ECR) plasma source of nitrogen. The effect of different ECR exit apertures on the growth rate and photoluminescence properties of GaN films was investigated. An aperture with a matrix of 1.6 mm holes allowed for GaN films with good optical properties at growth rates up to 1 μm/h. Apertures of larger diameter resulted in semi-insulating films. Room temperature photoluminescence for both undoped and Si-doped GaN films with full width at half maximum less than 100 meV has been obtained at the highest growth rates. We suggest that such an aperture effectively blocks the energetic ions from reaching the substrate thus reducing ion damage, resputtering, and increasing the Ga surface population. It also creates a higher pressure inside the ECR resonator, and therefore, provides a higher flux of active species. While further optimization will result in better GaN film quality, our ...