Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime
Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime
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DOI：
10.1103/physrevlett.90.076802
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发表时间：
2003-02-21
影响因子：
8.6
通讯作者：
Ritchie, DA
中科院分区：
文献类型：
--
作者：
Li, L;Proskuryakov, YY;Ritchie, DA
在高迁移率二维电子气中，我们在强磁场 (omega(c)tau>1) 中观察到，在 k(B)Ttau/hsimilar to1 区域中，由电子-电子相互作用引起的抛物线负磁阻，这是从扩散区域到弹道区域的转变。根据该磁阻的温度依赖性，在长程波动电势和强磁场的情况下，获得了对电导率 deltasigma(xx)(ee)(T) 的相互作用校正。结果与相互作用引起磁阻新理论的预测进行了比较。
On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega(c)tau>1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k(B)Ttau/hsimilar to1, which is the transition from the diffusive to the ballistic regime. From the temperature dependence of this magnetoresistance the interaction correction to the conductivity deltasigma(xx)(ee)(T) is obtained in the situation of a long-range fluctuation potential and strong magnetic field. The results are compared with predictions of the new theory of interaction-induced magnetoresistance.