Multi-contact Phase Change Toggle Logic Device Utilizing Thermal Crosstalk
Multi-contact Phase Change Toggle Logic Device Utilizing Thermal Crosstalk
复制标题
利用热串扰的多触点相变切换逻辑器件
DOI：
--
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
A. Gokirmak
中科院分区：
文献类型：
--
作者：
R. Khan;Nadim H. Kanan;J. Scoggin;H. Silva;A. Gokirmak
相变存储器（PCM）是一种新兴的高速、高密度、高耐久性和可扩展的非易失性存储器技术，它利用了硫化物材料（如Ge2Sb2Te5， （GST））的非晶相和结晶相之间的大电阻率对比。除了用作独立存储器之外，在CMOS层之上集成PCM器件用于存储器和神经形态计算的兴趣也越来越大。内存控制器的大型CMOS开销是实现此目的的限制因素。将路由、多路复用和逻辑等功能转移到存储器层可以大大减少CMOS开销，使在传统CPU[1]、[2]之上集成100gb的PCM存储成为可能。
Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable nonvolatile memory technology which utilizes the large resistivity contrast between the amorphous and crystalline phases of chalcogenide materials such as Ge2Sb2Te5, (GST). In addition to being used as a standalone memory, there has been a growing interest in integration of PCM devices on top of the CMOS layer for computation in memory and neuromorphic computing. The large CMOS overhead for memory controllers is a limiting factor for this purpose. Transferring functionality like routing, multiplexing, and logic to the memory layer can substantially reduce the CMOS overhead, making it possible to integrate 100s of GB of PCM storage on top of a conventional CPU [1], [2].