Growth of three-dimensional graphene films on the Ni foil
Growth of three-dimensional graphene films on the Ni foil
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DOI：
10.1080/02670844.2016.1141157
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发表时间：
2016-01-01
影响因子：
2.8
通讯作者：
Wu, Q-H.
中科院分区：
文献类型：
--
作者：
Qu, B.;Lian, X-B.;Wu, Q-H.
三维（3D）石墨烯的构建由于其在传感器、催化和能量转换/存储等领域的潜在应用而成为近几十年来最引人注目的工程话题之一。在本研究中，我们报道了利用等离子体增强化学气相沉积技术在镍箔衬底上合成三维石墨烯薄膜。拉曼光谱、x射线衍射、扫描电镜和透射电镜结果表明，合成的三维石墨烯薄膜具有多层结构、缺陷浓度高、晶粒尺寸小等特点。最后提出了三维石墨烯的生长机理。
Construction of three-dimensional (3D) graphene has become one of the most stirring engineering topics in recent decades due to their potential applications in the fields of sensor, catalysis and energy conversion/storage. In present work, we reported the synthesis of 3D graphene films using plasma-enhanced chemical vapour deposition on the Ni foil substrate. The results of Raman spectroscopy, X-ray diffraction, scanning electron microscopy and transmission electron microscopy indicated that the synthesised 3D graphene films are in multi-layered structure, with high defect concentration, and with small crystalline particle size. Finally the growth mechanism of the 3D graphene is proposed.