Experimental evaluation of direct liquid cooling on GaN HEMT based power amplifier MMIC
Experimental evaluation of direct liquid cooling on GaN HEMT based power amplifier MMIC
复制标题
基于 GaN HEMT 的功率放大器 MMIC 直接液冷实验评估
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
R. Wilcoxon
中科院分区：
文献类型：
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作者：
C. Xie;R. Wilcoxon
我们描述了使用直接液体冷却来提高x波段GaN HEMT功率放大器单片微波集成电路的性能。通过改进散热方式，工作漏极偏置从20V增加到44V，连续波工作条件下，PA MMIC输出5.1W/mm功率密度，耗散8.9W/mm热功率。
We describe the use of direct liquid cooling to improve the performance of an X-band GaN HEMT based power amplifier Monolithic Microwave Integrated Circuit. With improved cooling, the operating drain bias was increased from 20V to 44V and the PA MMIC delivered 5.1W/mm power density while dissipating 8.9W/mm of thermal power under continuous wave operating condition.