On-chip superconductivity via gallium overdoping of silicon
On-chip superconductivity via gallium overdoping of silicon
复制标题
通过硅中镓的过度掺杂实现片上超导
DOI：
10.1063/1.3509411
复制
发表时间：
2010
影响因子：
4
通讯作者：
J. Wosnitza
中科院分区：
文献类型：
--
作者：
R. Skrotzki;J. Fiedler;T. Herrmannsdörfer;V. Heera;M. Voelskow;A. Mücklich;B. Schmidt;W. Skorupa;G. Gobsch;M. Helm;J. Wosnitza
本文报道了商用（100）取向硅片中富镓硅层的超导特性。离子注入和随后的快速热退火已被用于实现镓沉淀下的二氧化硅覆盖层。根据制备参数，我们观察到在7 K下电阻急剧下降到零。临界场各向异性证明了薄膜的超导特性。此外，超过9 T的面外临界场和超过2 kA/cm 2的临界电流密度促使这些结构成为未来微电子技术的可能场所。
We report on superconducting properties of gallium-enriched silicon layers in commercial (100) oriented silicon wafers. Ion implantation and subsequent rapid thermal annealing have been applied for realizing gallium precipitation beneath a silicon-dioxide cover layer. Depending on the preparation parameters, we observe a sharp drop to zero resistance at 7 K. The critical-field anisotropy proofs the thin-film character of superconductivity. In addition, out-of-plane critical fields of above 9 T and critical current densities exceeding 2 kA/cm2 promote these structures to be possible playgrounds for future microelectronic technology.