8‐2: Low Cost Manufacturing of AlZnO/ZnO Thin Film Transistor with High Mobility Over 80 cm2/Vs and Positive Threshold Voltage by Spray Pyrolysis
8‐2: Low Cost Manufacturing of AlZnO/ZnO Thin Film Transistor with High Mobility Over 80 cm2/Vs and Positive Threshold Voltage by Spray Pyrolysis
复制标题
DOI：
10.1002/sdtp.14615
复制
发表时间：
2021-05
期刊：
影响因子：
--
通讯作者：
Jewel Kumer Saha;Arqum Ali;Mobaidul Islam;Ravindra Naik Bukke;Jin Jang
中科院分区：
文献类型：
--
作者：
Jewel Kumer Saha;Arqum Ali;Mobaidul Islam;Ravindra Naik Bukke;Jin Jang
我们通过在350 °C下喷雾热解来展示低成本的AlZnO/ZnO TFT。高场效应迁移率超过80 cm 2/V.s，亚阈值斜率为123 mV/decade。较高的迁移率是由于在AlZnO/ZnO界面处的类2D电子气。在正偏置应力下，叠层TFT显示出正阈值电压和可忽略的阈值电压漂移。界面处的Al-O的存在减少了氧空位并提高了偏压稳定性。
We demonstrate the low‐cost AlZnO/ZnO TFT by spray pyrolysis at 350 °C. High field‐effect mobility is achieved over 80 cm2/V.s with a subthreshold slope of 123 mV/decade. The higher mobility is due to the 2D like electron gas at the interface of AlZnO/ZnO. The stack TFT shows positive threshold voltage and negligible threshold voltage shift under positive bias stress. The presence of Al‐O at the interface reduces the oxygen vacancies and improves the bias stability.