Atomic-scale analysis of fundamental mechanisms of surface valley filling during plasma deposition of amorphous silicon thin films
Atomic-scale analysis of fundamental mechanisms of surface valley filling during plasma deposition of amorphous silicon thin films
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DOI：
10.1016/j.susc.2004.10.039
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发表时间：
2005-01
期刊：
影响因子：
1.9
通讯作者：
M. S. Valipa;S. Sriraman;E. Aydil;D. Maroudas
中科院分区：
文献类型：
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作者：
M. S. Valipa;S. Sriraman;E. Aydil;D. Maroudas
