Current Sharing Analysis of SiC Power Modules in Parallel Operation
Current Sharing Analysis of SiC Power Modules in Parallel Operation
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SiC功率模块并联运行均流分析
DOI：
10.1109/ecce44975.2020.9236326
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Jin Wang
中科院分区：
文献类型：
--
作者：
Yue Zhang;Zhining Zhang;Boxue Hu;Faisal Alsaif;Khalid Alkhalid;Xiao Li;Jin Wang
本文旨在研究并联 SiC 功率模块之间电流失配的影响因素，包括栅极驱动器电路、母线阻抗、负载连接和负载阻抗。与使用硅功率器件相比，SiC 功率模块由于显着降低的导通电阻、更低的负载电感和更高的稳态 di/dt，因此阻抗不对称和电感耦合的影响更加明显。研究还表明，栅极驱动器电路中的纳秒级失配可能导致严重的动态电流失配。通过硬件测试和详细仿真来探索这些影响，最终实现了动态开关能量2.41%的失配和稳态均流的最小失配。
This paper seeks to study the contributing factors to current mismatch among parallelled SiC power modules, including the gate driver circuits, and the impedance of the bus barsm, the load connection and the load impedance. Compared with using silicon power devices, the effect of impedance asymmetry and inductive coupling is more pronounced with SiC power modules due to significantly lower on-resistance, lower load inductance and higher steady state di/dt. It is also revealed that nanosecond-level mismatch in the gate driver circuits can lead to significant dynamic current mismatch. Hardware tests and detailed simulations are carried out to explore these effects, and finally achieving 2.41% mismatch in dynamic switching energy and minimal mismatch in the steady state current sharing.