Large Rectification Effect of Single Graphene Nanopore Supported by PET Membrane.
Large Rectification Effect of Single Graphene Nanopore Supported by PET Membrane.
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DOI：
10.1021/acsami.6b16736
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发表时间：
2017-03
影响因子：
9.5
通讯作者：
H. Yao;J. Zeng;P. Zhai;Zongzhen Li;Yaxiong Cheng;Jiande Liu;D. Mo;J. Duan;Lanxi Wang;Youmei Sun;Jie Liu
中科院分区：
文献类型：
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作者：
H. Yao;J. Zeng;P. Zhai;Zongzhen Li;Yaxiong Cheng;Jiande Liu;D. Mo;J. Duan;Lanxi Wang;Youmei Sun;Jie Liu
石墨烯具有原子尺度的厚度以及高的化学和机械稳定性，是开发固态纳米孔的理想候选者。在快速重离子辐照和不对称刻蚀技术的辅助下，采用一种简便的方法，分三步制备了以聚对苯二甲酸乙二酯为载体的石墨烯纳米孔(G/PET纳米孔)。在KCl电解液中，与裸PET纳米孔相比，G/PET纳米孔的离子整流效应发生了反转。通过用盐酸将PET锥形纳米孔的壁电荷态由负变正，可以大大提高G/PET纳米孔的离子整流效果，整流比最大可达190。此外，在G/PET纳米孔体系中还观察到了高离子通量和高离子分离效率。通过比较G/PET纳米孔在低于腐蚀点(IEP，pH=3.8)等电点的溶液中的“开”和“关”态电导，建立了关断电导的电压依赖关系，证实了在较高的外加电压下，大的整流效应强烈依赖于特别低的关断电导。
Graphene is an ideal candidate for the development of solid state nanopores due to its thickness at the atomic scale and its high chemical and mechanical stabilities. A facile method was adopted to prepare single graphene nanopore supported by PET membrane (G/PET nanopore) within the three steps assisted by the swift heavy ion irradiation and asymmetric etching technology. The inversion of the ion rectification effect was confirmed in G/PET nanopore while comparing with bare PET nanopore in KCl electrolyte solution. By modifying the wall charge state of PET conical nanopore with hydrochloric acid from negative to positive, the ion rectification effect of G/PET nanopore was found to be greatly enhanced and the large rectification ratio up to 190 was obtained during this work. Moreover, the high ionic flux and high ion separation efficiency was also observed in the G/PET nanopore system. By comparing the "on" and "off" state conductance of G/PET nanopore while immersed in the solution with pH value lower than the isoelectric point of the etched PET (IEP, pH = 3.8), the voltage dependence of the off conductance was established and it was confirmed that the large rectification effect was strongly dependent on the particularly low off conductance at higher applied voltage.