Characterization of active pixel sensors in 0.25 /spl mu/m CMOS technology
Characterization of active pixel sensors in 0.25 /spl mu/m CMOS technology
复制标题
采用 0.25 /spl mu/m CMOS 技术的有源像素传感器的表征
DOI：
10.1109/tns.2005.856915
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发表时间：
2005
影响因子：
1.8
通讯作者：
G. Villani
中科院分区：
文献类型：
--
作者：
J. Velthuis;P. Allport;G. Casse;A. Evans;R. Turchetta;M. Tyndel;G. Villani
我们正在开发用于高能物理应用的单片有源像素传感器。我们已经成功地制作了三个测试结构。它们具有几种不同的像素类型，包括灵活的APS(FAPS)。FAPS在每个像素中有一条10深的管道。这是专门针对直线对撞机的特斯拉提案的梁结构而设计的。这里，将报告显示在注量为10/sup 14/p/cm/sup 2/之后标准有源像素器件仍然运行良好的结果。此外，还给出了FAPS对来自a/sup 106/Ru/splβ/-源的最小电离粒子(MIP)的响应。得到的FAPS的10个单元的S/N比在15到17之间变化。
We are developing CMOS monolithic active pixel sensors for high energy physics applications. We have successfully produced three test structures. They feature several different pixel types including a Flexible APS (FAPS). The FAPS has a 10 deep pipeline in each pixel. This is specifically designed with the beam structure of the TESLA proposal for the Linear Collider in mind. Here results demonstrating that the standard active pixel devices are still operating well after a fluence of 10/sup 14/ p/cm/sup 2/ will be reported. Furthermore, the response of the FAPS to minimum ionizing particles (MIPs) from a /sup 106/Ru /spl beta/-source are presented. The obtained S/N ratio for the 10 cells of the FAPS varies between 15 and 17.