Proton-induced SEU, dose effects, and LEO performance predictions for R3000 microprocessors
Proton-induced SEU, dose effects, and LEO performance predictions for R3000 microprocessors
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R3000 微处理器的质子诱导 SEU、剂量效应和 LEO 性能预测
DOI：
10.1109/23.211441
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发表时间：
1992
影响因子：
1.8
通讯作者：
C. Casteneda
中科院分区：
文献类型：
--
作者：
D. Shaeffer;J. Kimbrough;J. W. Wilburn;S. Denton;J. Kaschmitter;N. Colella;P. Coakley;C. Casteneda
本文介绍了低能量（I 60 MeV）质子暴露测试结果的商业未硬化版本的MIPS计算机系统MOO0和R3OOOA微处理器从四个不同的供应商，并比较这些结果与以前获得的数据在256 MeV。质子单粒子翻转截面和总剂量硬度值。其中两个处理器的功能约为1 Mrad。所有处理器，除了一个例外，在40 krad以上都能正常工作。SEU横截面是使用专门设计的软件测试，在芯片的辐射曝光期间动态执行。研究了低轨卫星的抗辐照性和单粒子翻转能力。结果表明，商用WOO 0和R3OOOA微处理器适合在太空低地球轨道高度进行多年运行。
Abstruct-This paper presents low energy ( I 60 MeV) proton exposure test results for commercial unhardened versions of the MIPS Computer Systems MOO0 and R3OOOA microprocessors from four different vendors, and compares these results with previously obtained data at 256 MeV. Proton SEU cross sections and total dose hardness values are presented. Two of the processors functioned to about 1 Mrad. All processors, with one exception, remained functional above 40 krad. SEU cross sections were obtained with the use of specially designed software tests which were executed dynamically during radiation exposure of the chips. Radiation hardness and SEU are investigated for LEO. Results indicate that commercial WOO0 and R3OOOA microprocessors are suitable for multi-year operation at LEO altitudes in space.