Vertical, electrolyte-gated organic transistors show continuous operation in the MA cm-2 regime and artificial synaptic behaviour
Vertical, electrolyte-gated organic transistors show continuous operation in the MA cm-2 regime and artificial synaptic behaviour
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DOI：
10.1038/s41565-019-0407-0
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发表时间：
2019-06-01
影响因子：
38.3
通讯作者：
Weitz, R. Thomas
中科院分区：
文献类型：
--
作者：
Lenz, Jakob;del Giudice, Fabio;Weitz, R. Thomas
到目前为止，有机半导体未能在高度集成的100 nm以下晶体管中实现高性能。因此，单晶材料如单壁碳纳米管、MoS 2或无机半导体是纳米级的首选材料。在这里，我们使用垂直场效应晶体管设计，沟道长度仅为40 nm，占地面积为2 x 80 x 80 nm（2），当使用电解质门控时，可以实现有机聚合物的高电气性能。我们的有机晶体管联合收割机结合了3 MA cm（-2）以上的高通态电流密度、高达10（8）的通/断电流调制比和高达5，000 S m（-1）的大跨导。考虑到在如此大的开/关比下的高开态电流，我们的新型结构也显示出在人工神经网络中使用的前景，在人工神经网络中，它们可以作为忆阻器件以低于100 fJ的能量使用进行操作。
Until now, organic semiconductors have failed to achieve high performance in highly integrated, sub-100 nm transistors. Consequently, single-crystalline materials such as single-walled carbon nanotubes, MoS2 or inorganic semiconductors are the materials of choice at the nanoscale. Here we show, using a vertical field-effect transistor design with a channel length of only 40 nm and a footprint of 2 x 80 x 80 nm(2), that high electrical performance with organic polymers can be realized when using electrolyte gating. Our organic transistors combine high on-state current densities of above 3 MA cm(-2), on/off current modulation ratios of up to 10(8) and large transconductances of up to 5,000 S m(-1). Given the high on-state currents at such large on/off ratios, our novel structures also show promise for use in artificial neural networks, where they could operate as memristive devices with sub-100 fJ energy usage.