Optical mixing in epitaxial lift-off pseudomorphic HEMTs
Optical mixing in epitaxial lift-off pseudomorphic HEMTs
复制标题
外延剥离赝晶 HEMT 中的光学混合
DOI：
10.1109/68.466580
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发表时间：
1995
影响因子：
2.6
通讯作者：
D. Streit
中科院分区：
文献类型：
--
作者：
Daipayan Bhattacharya;P. Bal;H. Fetterman;D. Streit
在这篇文章中，我们介绍了在高达22 GHz的微波范围内，在不同频率下外延升离（ELO）伪晶hemt （phemt）的光学混频。栅极长度为3 /spl mu/m的AlGaAs-InGaAs PHEMT从其宿主GaAs衬底上剥离，随后附着在石英载玻片上。观察到，在正面和背面照明下，ELO器件始终比非ELO器件产生更强的信号（/spl sim/7 dB）。这是由于光学耦合效率的提高，衬底泄漏的减少，以及ELO薄膜的照明诱导的背门效应
In this letter, we present optical mixing in epitaxial lift-off (ELO) pseudomorphic HEMTs (PHEMTs) at difference frequencies in the microwave regime up to 22 GHz. The 3 /spl mu/m gate length AlGaAs-InGaAs PHEMT's mere lifted off their host GaAs substrates and subsequently attached to quartz slides. It was observed that the ELO devices consistently resulted in stronger signals (/spl sim/7 dB) than the non-ELO devices under frontside and backside illumination. This is attributed to improved optical coupling efficiency, a decrease in substrate leakage, and an illumination-induced back gating effect for the ELO films.<<ETX>>