Formation Phases and Electrical Properties of Ge-Bi-Te Compounds with Homologous Structures
Formation Phases and Electrical Properties of Ge-Bi-Te Compounds with Homologous Structures
复制标题
DOI：
10.1007/s11664-015-4083-z
复制
发表时间：
2016-03
影响因子：
2.1
通讯作者：
T. Omoto;H. Kanaya;H. Ishibashi;Y. Kubota;K. Kifune;A. Kosuga
中科院分区：
文献类型：
--
作者：
T. Omoto;H. Kanaya;H. Ishibashi;Y. Kubota;K. Kifune;A. Kosuga
我们通过熔化 Ge、Bi、In 和 Te 的化学计量混合物，然后在水中淬火并在 723 K 下退火 1 周，制备了 GeBi6−xInxTe10(x= 0、0.06、0.18、0.3 和 0.6) 多晶样品。在这些制备条件下，无论 In 取代程度如何，样品都含有两种不同的周期结构：GeBi6Te10 和 GeBi4Te7 结构。在室温下研究了两种结构的塞贝克系数、电阻率和相分数之间的关系。我们得出的结论是，所有样品的输运特性的变化可能反映了本研究假设结构模型框架中两种结构的相分数和 In 取代量的混合效应。 x= 0 和 0.18 的样品的热电性能是根据测量的电性能和报告的晶格热导率在 300 K 至 723 K 范围内确定的。 x= 0.18 的样品在 466 K 时具有最高的无量纲品质因数：ZTmax= 0.11，比 x= 0 的样品大 1.8 倍。
We prepared polycrystalline samples of GeBi6−xInxTe10(x= 0, 0.06, 0.18, 0.3, and 0.6) by melting a stoichiometric mixture of Ge, Bi, In, and Te, followed by quenching in water and annealing at 723 K for 1 week. Under these preparation conditions and irrespective of the degree of In-substitution, the samples contained two different periodic structures: GeBi6Te10and GeBi4Te7structures. The relationship between the Seebeck coefficient, electrical resistivity, and phase fraction of the two structures was investigated at room temperature. We concluded that changes in the transport properties for all samples may reflect a mixture effect of the phase fraction of the two structures and the amounts of In-substitution in the framework of the assumed structure model in this study. The thermoelectric properties of the samples withx= 0 and 0.18 were determined from 300 K to 723 K from the measured electrical properties and the reported lattice thermal conductivity. The sample withx= 0.18 had the highest dimensionless figure of merit:ZTmax= 0.11 at 466 K, which was 1.8 times larger than that of the sample withx= 0.