Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device
Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device
复制标题
来自 InAs/GaAs 量子点光混频器装置的连续波太赫兹辐射
DOI：
--
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
E. Rafailov
中科院分区：
文献类型：
--
作者：
T. Kruczek;R. Leyman;D. Carnegie;N. Bazieva;G. Erbert;S. Schulz;C. Reardon;S. Reynolds;E. Rafailov
报道了一种基于量子点半导体材料的外差式太赫兹连续波辐射源。该源包括一个有源区，其特征在于由多个交替的光电导和量子点载流子捕获层，并由两个红外光信号与稍微偏移的波长泵浦，允许光电导器件在信号切换？差频~1 THz。(C)2012年美国物理学会。
Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals? difference frequency ~1 THz.(C) 2012 American Institute of Physics.