Implanted gallium-ion concentrations of focused-ion-beam prepared cross sections
Implanted gallium-ion concentrations of focused-ion-beam prepared cross sections
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聚焦离子束制备的横截面的注入镓离子浓度
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
T. Kamino
中科院分区：
文献类型：
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作者：
T. Ishitani;H. Koike;T. Yaguchi;T. Kamino
镓（Ga）聚焦离子束（FIB）已广泛用于制备用于透射电子显微镜（TEM）和扫描电子或离子显微镜的横截面样品。然而，在理论上和实验上，对纤维束制备的横截面的特性，如离子浓度和辐射损伤的研究很少。在本研究中，由30 keV Ga FIB制备的横截面建模使用分析和蒙特卡罗方法的组合来计算注入Ga浓度。结果表明，Si/W层状样品的截面掠射角分别为β = 2.5°和β = 6°。用于横截面Si和W层的注入Ga离子非常靠近它们的<10 nm的表面集中，以分别产生用于这些层的约4和9原子%的Ga浓度CGa。虽然计算结果与实验结果在样品材料上存在一定差异，但Si和W层的计算CGa值与实验值基本一致。
A gallium (Ga) focused-ion-beam (FIB) has been popularly used to prepare cross-sectional samples for transmission electron microscopes (TEMs) and scanning electron or ion microscopes. However, characteristics of the FIB-prepared cross sections such as ion concentration and radiation damage have been little studied either in theory or in experiment. In the present study, cross sections prepared by 30 keV Ga FIB are modeled using a combination of analytical and Monte Carlo methods to calculate the implanted Ga concentration. It is found that the Si/W layered sample is cross sectioned at grazing angles β≈2.5° and 6° for these layers, respectively. The implanted Ga ions for the cross-sectioned Si and W layers are concentrated very near their surfaces of <10 nm to yield the Ga concentrations CGa of about 4 and 9 at % for these layers, respectively. Although there is some differences in sample materials between the calculations and the experiments, the calculated CGa values for Si and W layers roughly agree wit...