XPS AND AES STUDIES ON THE OXIDATION OF LAYERED SEMICONDUCTOR GASE
XPS AND AES STUDIES ON THE OXIDATION OF LAYERED SEMICONDUCTOR GASE
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DOI：
10.1143/jjap.21.94
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发表时间：
1982-01-01
期刊：
影响因子：
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通讯作者：
ICHIMURA, S
中科院分区：
文献类型：
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作者：
IWAKURO, H;TATSUYAMA, C;ICHIMURA, S
我们用XPS和AES技术研究了解理表面无悬挂键的层状化合物Gase的氧化反应。在室温下，解理表面在氧气气氛中不会被氧化。当受到Ar离子溅射时，由于原始层Se-Ga-Ga-Se中的第一亚层Se的耗散，表面开始表现出金属Ga的行为。这样暴露出来的金属Ga薄层很容易被氧化。在裂解的GaS在空气中的热氧化过程中，氧扩散到原始层并与Ga结合，切断了Se和Ga原子之间的层内成键。在高于450℃的温度下，氧也从垂直于原始层的侧面插入原始层之间。在任何氧化条件下都没有观察到Se氧化物。
We have studied the oxidation of layered compound GaSe with no dangling bonds on the cleaved surface using XPS and AES techniques. At room temperature, the cleaved surface is not oxidized in an oxygen atmosphere. When subjected to Ar ion sputtering, the surface starts to exhibit the behavior of metallic Ga owing to dissipation of the first sublayer of Se in the primitive layer, Se–Ga–Ga–Se. The thin layer of metallic Ga thus exposed is easily oxidized. In the thermal oxidation of cleaved GaSe in air, the oxygen diffuses into the primitive layer and combines with Ga, severing the intralayer bonding between the Se and Ga atoms. At temperature higher than 450 C, the oxygen is also intercalated between the primitive layers from the sides perpendicular to the layers. No Se oxides are observed under any of the oxidation conditions.