Epitaxial Growth and Band Structure of Te Film on Graphene
Epitaxial Growth and Band Structure of Te Film on Graphene
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石墨烯上Te薄膜的外延生长和能带结构
DOI：
10.1021/acs.nanolett.7b01029
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发表时间：
2017-08-01
期刊：
影响因子：
10.8
通讯作者：
Guo, Jiandong
中科院分区：
文献类型：
--
作者：
Huang, Xiaochun;Guan, Jiaqi;Guo, Jiandong
通过分子束外延在石墨烯/6H-SiC(0001)衬底上获得单层和少层厚度的碲（Te）薄膜，并通过原位扫描隧道显微镜和光谱（STM/STS）进行研究。我们揭示了 Te 薄膜由平放在石墨烯表面上的平行排列的螺旋 Te 链组成，暴露了块体晶体的 (10 (1) over bar0) 的 (1 X 1) 面。 Te薄膜的带隙随着厚度的减小单调增加，达到单层Te的近红外波段。可以看到单层 Te 和石墨烯基底之间边缘处的明显能带弯曲。随着厚度控制在原子尺度，Te薄膜显示出电子和光电子学的潜在应用。
Tellurium (Te) films with monolayer and few-layer thickness are obtained by molecular beam epitaxy on a graphene/6H-SiC(0001) substrate and investigated by in situ scanning tunneling microscopy and spectroscopy (STM/STS). We reveal that the Te films are composed of parallel-arranged helical Te chains flat-lying-on the graphene surface, exposing the (1 X 1) facet of (10 (1) over bar0) of the bulk crystal. The band gap of Te films increases monotonically with decreasing thickness, reaching the near-infrared band for the monolayer Te. An explicit band bending at the edge between the monolayer Te and graphene substrate is visualized. With the thickness controlled in the atomic scale, Te films show potential applications of electronics and optoelectronics.