A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10
A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10
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DOI：
10.1007/s12217-016-9493-x
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发表时间：
2016-04
影响因子：
1.8
通讯作者：
Jianding Yu;Yan Liu;Xiuhong Pan;Hongyang Zhao;VeluNirmal Kumar;M. Arivanandhan;Y. Momose;Y. Hayakawa;Xingwang Zhang;Xinghong Luo;Yasuhiro Okano;Y. Inatomi
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文献类型：
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作者：
Jianding Yu;Yan Liu;Xiuhong Pan;Hongyang Zhao;VeluNirmal Kumar;M. Arivanandhan;Y. Momose;Y. Hayakawa;Xingwang Zhang;Xinghong Luo;Yasuhiro Okano;Y. Inatomi
为了弄清重力对InGaSb三元合金半导体晶体生长的影响，本文回顾了我国回收卫星微重力实验、X射线穿透法原位测量溶液成分分布和在陆地条件下采用温度冻结法均匀生长InGaSb的实验。以往的实验结果表明，固/液界面的形状和溶液中的组成分布受重力的显着影响。在前期微重力实验的基础上，研究了在我国回收卫星SJ-10上生长高铟组分的均匀InxGa 1 −xSb的实验条件。
The paper reviewed the previous microgravity experiment using Chinese recovery satellite, the in-situ measurement of composition profile in the solution by X-ray penetration method and homogeneous growth of InGaSb by temperature freezing method under terrestrial condition for making clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals. The previous experimental results showed that the shape of solid/liquid interfaces and composition profile in the solution were significantly affected by gravity. Based on the previous microgravity experimental results, experimental conditions were investigated to grow homogeneous InxGa1−xSb with higher indium composition at Chinese recovery satellite SJ-10 in near future.