Dependence of generation and structures of stacking faults on growing surface stoichiometries in ZnSe/GaAs
Dependence of generation and structures of stacking faults on growing surface stoichiometries in ZnSe/GaAs
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ZnSe/GaAs 中堆垛层错的产生和结构对生长表面化学计量的依赖性
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
T. Yao
中科院分区：
文献类型：
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作者：
L. Kuo;K. Kimura;S. Miwa;T. Yasuda;T. Yao
在不同的束流比下，通过分子束外延在暴露于Zn （2×4）的砷化镓薄膜的As稳定表面上生长出薄的ZnSe薄膜。在生长的初始阶段，在混合（2×1）和弱c（2×2）表面重建的条件下生长的样品中，产生的缺陷密度非常低，在~ 104/cm2范围内。然而，在富锌和富硒表面化学测量下生长的样品中，分别产生了外部阳离子端和阴离子端Shockley型层错密度的不对称分布。
Thin ZnSe films were grown by molecular beam epitaxy on Zn exposed (2×4) As‐stabilized surfaces of GaAs epilayers under varied beam flux ratios. A very low density of faulted defects in the range of ∼ 104/cm2 was generated in samples grown under a condition with a mixture of both (2×1) and weak c(2×2) surface reconstructions at the initial stages of growth. However, an asymmetric distribution on the densities of extrinsic cation‐ and anion‐terminated Shockley‐type stacking faults were generated, respectively, in samples grown under Zn‐ and Se‐rich surface stoichiometries.