Correlation of Finite Element Stress Simulations with Electromigration-Induced Fractures in Tungsten Plug Structures

Correlation of Finite Element Stress Simulations with Electromigration-Induced Fractures in Tungsten Plug Structures
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有限元应力模拟与钨塞结构中电迁移引起的断裂的相关性

DOI:
10.1007/978-3-7091-6827-1_83
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发表时间:
1998
期刊:
影响因子:
--
通讯作者:
J. Zhao
J. Zhao
中科院分区:
--
文献类型:
--
作者:
S. Chaudhry;P. Layman;J. Huang;A. Oates;S. Merchant;J. Zhao

文献摘要

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采用有限元应力模拟的方法解释了钨塞结构中裂纹的起源和由此引起的通孔阻力的增加。模拟结果表明,电迁移损耗过程中的应力演化可以解释钨塞互连结构的这种新的破坏机制。
Finite element stress simulations are used to explain the origin of cracks and the related increase in via resistance in tungsten plug structures. The simulations suggest that stress evolution during electromigration induced depletion can explain this new failure mechanism in interconnect structures using tungsten plugs.