Distribution of density of photonic states in amorphous photonic materials
Distribution of density of photonic states in amorphous photonic materials
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DOI：
10.1063/1.1609663
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发表时间：
2003-09
影响因子：
4
通讯作者：
Yiquan Wang;B. Cheng;Dao-zhong Zhang
中科院分区：
文献类型：
--
作者：
Yiquan Wang;B. Cheng;Dao-zhong Zhang
本文模拟了由六边形基元构成的有限尺寸非晶态光子材料（APM）的态密度（DOS）和局域态密度（LDOS）。结果表明，在一个频率区间内，总DOS很小，即存在光子间隙。在间隙中心频率附近，LDOS从样品的边缘迅速下降到中心区域。然而，在隙边频率下，一些具有高LDOS的离散点在样品中扩散，相应的电场分布显示出局域模式的出现。这种现象可归因于散射体的无序分布。
The density of states (DOS) and local density of states (LDOS) for an amorphous photonic material (APM) with a finite size and constructed by hexagonal basic cells are simulated. It is found that there is a frequency interval in which the total DOS is very small, i.e., a photonic gap exists. Near the gap-center frequency, the LDOS drops rapidly from the edge to the center area of the sample. However, at the gap-edge frequency, some discrete spots with high LDOS spread in the sample and corresponding electric field distributions show the occurrence of localized modes. This phenomenon can be attributed to the disordered distribution of the scatterers.