Replacing linear Hamming codes by robust nonlinear codes results in a reliability improvement of memories
Replacing linear Hamming codes by robust nonlinear codes results in a reliability improvement of memories
复制标题
用鲁棒非线性码代替线性汉明码可以提高存储器的可靠性
DOI：
10.1109/dsn.2009.5270297
复制
发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Konrad J. Kulikowski
中科院分区：
文献类型：
--
作者：
Zhen Wang;M. Karpovsky;Konrad J. Kulikowski
用于可靠存储器设计的线性单纠错、双错误检测(SEC-DED)码不能检测和错误纠正具有较大汉明重量的错误。我们提出了基于扩展Vasil‘ev码的存储设备保护。与具有相同尺寸和冗余的线性码相比，这些非线性SECDED码具有最小距离为4，更少的不可检测的错误和更少的错误被错误纠正。扩展的Vasil‘ev码可以在存在重复错误或高多比特扰乱的情况下提供更高的可靠性。据我们所知，我们的论文是唯一一篇讨论有效的非线性编码在可靠存储器设计中的应用的论文。该方法可以应用于硬件开销相对较小的RAM、ROM、Flash和磁盘存储器。
Linear single-error-correcting, double-error-detecting (SEC-DED) codes used in the design of reliable memories cannot detect and can miscorrect errors with large Hamming weights. We propose protection for memory devices based on extended Vasil'ev codes. These nonlinear SECDED codes have a minimum distance of four, fewer undetectable errors and fewer errors that are miscorrected than linear codes with the same dimension and redundancy. The extended Vasil'ev codes can provide for higher reliability in the presence of repeating errors or high rate of multibitupsets. As far as we know, our paper is the only one discussing application of efficient nonlinear codes for design of reliable memories. The proposed approach can be applied to RAM, ROM, FLASH and disk memories with relatively low hardware overhead.