Crystal Growth and Scintillation Properties of ${\hbox {Cs}}_{2}{\hbox {NaCeBr}}_{6}$
Crystal Growth and Scintillation Properties of ${\hbox {Cs}}_{2}{\hbox {NaCeBr}}_{6}$
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${hbox {Cs}}_{2}{hbox {NaCeBr}}_{6}$ 的晶体生长和闪烁特性
DOI：
10.1109/tns.2010.2041789
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发表时间：
2010
影响因子：
1.8
通讯作者：
U. Hong
中科院分区：
文献类型：
--
作者：
Sunghwan Kim;G. Rooh;H. J. Kim;Wan Kim;U. Hong
本文研究了Cs<sub>2</sub>NaCeBr<sub>6</sub>晶体的生长、发光和闪烁特性。研究了Cs<sub>2</sub>NaCeBr<sub>6</sub>晶体，采用Bridgman法在双区垂直透明炉上生长。采用2CsBr + NaBr + CeBr<sub>3</sub>→Cs<sub>2</sub>NaCeBr<sub>6</sub>的反应合成了该材料。在紫外激发下，晶体在300 ~ 450 nm范围内发射，在377和400 nm处有两个峰。发射是由于Ce<sup>3+</sup>上的5d→4f跃迁。晶体在662 keV下的能量分辨率为6.7%。闪烁衰减时间表现为140 ns和880 ns两个分量。该晶体的产光量估计为25,000光子/MeV。
In this paper crystal growth, luminescence and scintillation properties of Cs<sub>2</sub>NaCeBr<sub>6</sub> crystal are presented. The studied Cs<sub>2</sub>NaCeBr<sub>6</sub> crystal was grown by the Bridgman method using a two-zone vertical transparent furnace. The material was synthesized using the reaction 2CsBr + NaBr + CeBr<sub>3</sub> → Cs<sub>2</sub>NaCeBr<sub>6</sub>. Under UV excitation the emission of crystal was observed in the range of 300 to 450 nm with two peaks at 377 and 400 nm. The emission is due to the 5d → 4f transitions on Ce<sup>3+</sup>. The energy resolution of the crystal measured under 662 keV was 6.7%. The scintillation decay time showed two components characterized by 140 ns and 880 ns time constants. The light yield of the crystal was estimated to be 25,000 photons/MeV.