Spin diode based on Fe/MgO double tunnel junction.
Spin diode based on Fe/MgO double tunnel junction.
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DOI：
10.1021/nl072676z
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发表时间：
2007-05
期刊：
影响因子：
10.8
通讯作者：
A. Iovan;S. Andersson;Y. Naidyuk;A. Vedyaev;B. Dieny;Vladislav Korenivski
中科院分区：
文献类型：
--
作者：
A. Iovan;S. Andersson;Y. Naidyuk;A. Vedyaev;B. Dieny;Vladislav Korenivski
我们展示了一个自旋二极管组成的无阻纳米Fe/MgO基双隧道结。该器件具有近乎完美的自旋阀效应和强二极管效应。与我们的数据相一致的机制是共振隧穿通过中间铁磁层中的离散状态夹在不同的自旋依赖的透明度的隧道势垒。观察到的磁阻是一个历史最高的> 1000%，基本上使该结构的开/关自旋开关。这与强二极管效应（约100）相结合，展示了一种新的器件原理，有望用于存储器和可重编程逻辑应用。
We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magnetoresistance is a record high>1000%, essentially making the structure an on/off spin switch. This, combined with the strong diode effect, approximately 100, demonstrates a new device principle, promising for memory and reprogrammable logic applications.