Effect of Al-addition on C-axis Orientation of Ba-ferrite Film Deposited on Amorphous Aluminum Oxide (α-AlO) Layer
Effect of Al-addition on C-axis Orientation of Ba-ferrite Film Deposited on Amorphous Aluminum Oxide (α-AlO) Layer
复制标题
添加 Al 对非晶氧化铝 (α-Al2O) 层上沉积的 Ba 铁氧体薄膜 C 轴取向的影响
DOI：
10.3379/tmjpn2001.4.43
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
A. Morisako
中科院分区：
文献类型：
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作者：
N. Shams;M. Matsumoto;A. Morisako
本文采用无定形氧化铝（α-AlO）作为衬底，制备了c轴取向钡铁氧体（BaM）薄膜。但在20nm以下，薄膜的矫顽力急剧下降。在底层有α-AlO的BaM薄膜中加入少量Al。衬底温度（Ts）保持在550℃。铝的含量从0- 4.5%不等。少量Al的加入可以使BaM薄膜具有完美的c轴取向，即使对于δθ50为2.5°~ 2.8°的10 nm薄膜也是如此。另一方面，薄于25 nm的BaM/α-AlO膜很难结晶。Al-BaM/α-AlO膜在垂直方向的矫顽力高于BaM/α-AlO膜，即使厚度低于20 nm。
In this study amorphous aluminum oxide (α-AlO) was used as an underlayer to crystallize c-axis oriented Ba-ferrite (BaM) film. But coercivity of these films was going to decrease sharply below 20 nm. A small amount of Al is added with BaM film with α-AlO underlayer. The substrate temperature (Ts) was kept at 550°C. Al content was varied from 0-4.5 atomic percent. Perfect c-axis orientation of BaM thin film is possible with a small addition of Al, even for the film of 10 nm with a δθ50 of 2.5°-2.8°. On the other hand, it was difficult to crystallize BaM/α-AlO film thinner than 25 nm. Coercivity of Al-BaM/α-AlO films in perpendicular direction was higher than that of BaM/α-AlO films, even for the thickness below 20 nm.