NEW METHOD FOR DETERMINATION OF ENERGY-DISTRIBUTION OF SURFACE-STATES IN THE SEMICONDUCTOR BAND-GAP - XPS MEASUREMENTS UNDER BIASES
NEW METHOD FOR DETERMINATION OF ENERGY-DISTRIBUTION OF SURFACE-STATES IN THE SEMICONDUCTOR BAND-GAP - XPS MEASUREMENTS UNDER BIASES
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DOI：
10.1016/0038-1098(94)90886-9
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发表时间：
1994-10-01
影响因子：
2.1
通讯作者：
NAKATO, Y
中科院分区：
文献类型：
--
作者：
KOBAYASHI, H;MORI, T;NAKATO, Y
半导体带隙中表面态的能量分布是通过偏压下的 X 射线光电子能谱 (XPS) 测量获得的。 XPS 测量的执行时间为 [ca]。 30 埃厚的 Pt/ca。 25 埃厚的氧化物/p-InP (100)] MIS 二极管。由于表面态电荷的积累，In(3d) 和 Pt(4f) 峰之间的结合能差异 E(In)-E(Pt) 通过施加偏压而改变。通过分析 E(In)-E(Pt) 中偏置引起的位移量来确定表面态的能量分布。表面态密度在中间能隙附近、导带最小值附近和价带最大值附近较高。
The energy distribution of surface states in the semiconductor band-gap has been obtained spectroscopically from measurements of X-ray photoelectron spectra (XPS) under biases. The XPS measurements are performed for [ca. 30 angstrom-thick Pt/ca. 25 angstrom-thick oxide/p-InP (100)] MIS diodes. The difference in binding energy between the In(3d) and Pt(4f) peaks, E(In)-E(Pt), is changed by applying biases, because of accumulation of charges in the surface states. The energy distribution of the surface states is determined by analyzing the amount of the bias-induced shift in E(In)-E(Pt). The density of the surface states is high near the mid-gap, near the conduction band minimum and near the valence band maximum.