Optical patterning of GaN films
Optical patterning of GaN films
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DOI：
10.1063/1.117473
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发表时间：
1996-09
影响因子：
4
通讯作者：
M. Kelly;O. Ambacher;B. Dahlheimer;G. Groos;R. Dimitrov;H. Angerer;M. Stutzmann
中科院分区：
文献类型：
--
作者：
M. Kelly;O. Ambacher;B. Dahlheimer;G. Groos;R. Dimitrov;H. Angerer;M. Stutzmann
GaN薄膜的图案化蚀刻是通过激光诱导热分解实现的。高能量激光脉冲用于将薄膜局部加热到900 °C以上，导致氮气快速渗出。然后通过常规蚀刻去除过量的镓。在用355 nm光进行0.4 J/cm 2的曝光时，获得50-70 nm/脉冲的蚀刻速率。用干涉光栅照射，以产生窄至100 nm的沟槽。
Patterned etching of GaN films was achieved with laser‐induced thermal decomposition. High‐energy laser pulses are used to locally heat the film above 900 °C, causing rapid nitrogen effusion. Excess gallium is then removed by conventional etching. At exposures of 0.4 J/cm2 with 355 nm light, etch rates of 50–70 nm per pulse were obtained. Illumination with an interference grating was used to produce trenches as narrow as 100 nm.