Silicon plasmonics at midinfrared using silicon-insulator-silicon platform
Silicon plasmonics at midinfrared using silicon-insulator-silicon platform
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DOI：
10.1117/1.jnp.11.016006
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发表时间：
2017-01-01
影响因子：
1.5
通讯作者：
Swillam, Mohamed A.
中科院分区：
文献类型：
--
作者：
Gamal, Rania;Shafaay, Sarah;Swillam, Mohamed A.
我们提出了基于掺杂硅的器件。掺杂硅被设计成在中红外（MIR）范围内充当等离子体介质。掺杂硅的表面等离子体激元频率可以在MIR范围内调谐，这在材料的色散中产生了有用的性质。我们提出了各种等离子体配置，可用于硅片上应用在MIR。这些器件具有优于传统硅器件的上级性能，并提供独特的功能，如90度急转弯、T和X结分束器和短截线。这些器件是CMOS兼容的，可以很容易地与其他电子设备集成。此外，使用掺杂的硅纳米线的生物和环境传感的潜力被证明。(C)2017年，摄影光学仪器工程师协会（SPIE）
We propose devices based on doped silicon. Doped silicon is designed to act as a plasmonic medium in the midinfrared (MIR) range. The surface plasmon frequency of the doped silicon can be tuned within the MIR range, which gives rise to useful properties in the material's dispersion. We propose various plasmonic configurations that can be utilized for silicon on-chip applications in MIR. These devices have superior performance over conventional silicon devices and provide unique functionalities such as 90-sharp degree bends, T-and X-junction splitters, and stubs. These devices are CMOS-compatible and can be easily integrated with other electronic devices. In addition, the potential for biological and environmental sensing using doped silicon nanowires is demonstrated. (C) 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)