Electron emission from conduction band of diamond with negative electron affinity
Electron emission from conduction band of diamond with negative electron affinity
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DOI：
10.1103/physrevb.80.165321
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发表时间：
2009-10
影响因子：
3.7
通讯作者：
H. Yamaguchi;T. Masuzawa;S. Nozue;Y. Kudo;I. Saito;J. Koe;M. Kudo;T. Yamada;Y. Takakuwa;K. Okano
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作者：
H. Yamaguchi;T. Masuzawa;S. Nozue;Y. Kudo;I. Saito;J. Koe;M. Kudo;T. Yamada;Y. Takakuwa;K. Okano
对1996年报道的金刚石极低阈值电子发射现象进行了实验研究。Okano等人，Nature（伦敦）381，140（1996）]。结合紫外光电子能谱/场发射谱的直接观察证明，重掺氮化学气相沉积（CVD）金刚石的场致电子发射起源于利用负电子亲和势（NEA）的导带最小值。这一结果的重要意义在于，它不仅证明了NEA是重掺N CVD金刚石极低阈值电子发射的主导因素，而且有力地暗示了其他类型金刚石甚至其他具有NEA表面的材料也可能具有这种低阈值电子发射。低的阈值电压，沿着稳定的强度和显著窄的能量宽度，表明这种类型的电子发射可以应用于开发具有长寿命和高能量分辨率的下一代真空纳米电子器件。
Experimental evidence explaining the extremely low-threshold electron emission from diamond reported in 1996 has been obtained [K. Okano et al., Nature (London) 381, 140 (1996)]. Direct observation using combined ultraviolet photoelectron spectroscopy/field-emission spectroscopy proved that the origin of field-induced electron emission from heavily nitrogen (N)-doped chemical-vapor deposited (CVD) diamond was at conduction-band minimum utilizing negative-electron affinity (NEA). The significance of the result is that not only does it prove the utilization of NEA as the dominant factor for the extremely low-threshold electron emission from heavily N-doped CVD diamond but also strongly implies that such low-threshold emission is possible from other types of diamond and even other materials having NEA surface. The low-threshold voltage, along with the stable intensity and remarkably narrow energy width, suggests that this type of electron emission can be applied to develop a next generation vacuum nanoelectronic devices with long lifetime and high-energy resolution.