Effects of plasma treatment on surface properties of ultrathin layered MoS2
Effects of plasma treatment on surface properties of ultrathin layered MoS2
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DOI：
10.1088/2053-1583/3/3/035002
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发表时间：
2016-09-01
期刊：
影响因子：
5.5
通讯作者：
Yoo, Won Jong
中科院分区：
文献类型：
--
作者：
Kim, Suhhyun;Choi, Min Sup;Yoo, Won Jong
这项工作研究了使用氧等离子体 (O-2) 处理（作为电感耦合等离子体）来控制 MoS2 层的厚度和功函数。等离子蚀刻的 MoS2 表现出与原始 MoS2 相似的表面粗糙度。使用等离子体蚀刻的 MoS2 制造的 MoS2 场效应晶体管显示出比原始 MoS2 更高的 n 型掺杂浓度。进行 X 射线光电子能谱分析化学成分，以证明等离子体处理时发生的化学反应的最低水平。此外，进行了开尔文探针力显微镜测量，以探测可能归因于表面电势变化的功函数的变化。测量的功函数表明等离子体处理后能带结构和 n 掺杂效应的改变取决于 MoS2 层的数量。这项研究表明，O-2 等离子体可以控制 MoS2 的层数以及 MoS2 薄膜的电子特性。
This work investigates the use of oxygen plasma (O-2) treatment, applied as an inductively coupled plasma, to control the thickness and work function of a MoS2 layer. Plasma-etched MoS2 exhibited a surface roughness similar to that of the pristine MoS2. The MoS2 field effect transistors fabricated using the plasma-etched MoS2 displayed a higher n-type doping concentration than that of pristine MoS2. The x-ray photoelectron spectroscopy was performed to analyze chemical composition to demonstrate the minimum level of chemical reactions occurred upon plasma treatment. Moreover, Kelvin probe force microscopy measurements were conducted to probe the changes in the work function that could be attributed to the changes in the surface potential. The measured work functions suggest the modification of a band structure and n-doping effect after plasma treatments that depended on the number of MoS2 layers. This study suggests that the O-2 plasma can control the layer number of the MoS2 as well as the electronic properties of a MoS2 film.