Step Coverage Characteristics of Pb(Zr, Ti)O3 Thin Films on Various Electrode Materials by Metalorganic Chemical Vapor Deposition
Step Coverage Characteristics of Pb(Zr, Ti)O3 Thin Films on Various Electrode Materials by Metalorganic Chemical Vapor Deposition
复制标题
金属有机化学气相沉积法在各种电极材料上制备Pb(Zr,Ti)O3薄膜的阶梯覆盖特性
DOI：
10.1143/jjap.36.5808
复制
发表时间：
1997
影响因子：
1.5
通讯作者：
Hirohiko Niu Shiosaki
中科院分区：
文献类型：
--
作者：
M. Shimizu;S. Hyodo;H. Fujisawa;Hirohiko Niu Shiosaki
研究了金属有机物化学气相沉积（MOCVD）法制备的Pb（Zr，Ti）O3（PZT）薄膜在Pt/SiO2、Ir/SiO2和IrO 2/SiO2等不同电极材料台阶上的台阶覆盖特性。在500和550° C下沉积在Pt/SiO2上的PZT膜的台阶覆盖率为80- 87%。在600° C沉积PZT薄膜时，观察到Pt/SiO2台阶的变形。台阶变形的主要原因是Pb向台阶中的扩散。当在500-600° C和500和550° C下分别在Ir/SiO_2和IrO_2/SiO_2上沉积PZT薄膜时，分别获得了76-93%和70-85%的良好台阶覆盖率。
The step coverage characteristics of Pb(Zr, Ti)O3 (PZT) thin films on steps with various electrode materials, such as Pt/SiO2, Ir/SiO2 and IrO2/SiO2, by metalorganic chemical vapor deposition (MOCVD) were investigated. The step coverage of PZT films deposited on Pt/SiO2 at 500 and 550° C was 80–87%. Deformation of Pt/SiO2 steps was observed when PZT films were deposited at 600° C. The cause of this deformation of steps was mainly the diffusion of Pb into the steps. When PZT thin films were deposited on Ir/SiO2 at 500–600° C and IrO2/SiO2 at 500 and 550° C, good step coverage of 76–93% and 70–85% was obtained, respectively.