Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms
Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms
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DOI：
10.1063/1.2472558
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发表时间：
2007-02
影响因子：
4
通讯作者：
S. Vicknesh;S. Tripathy;V. K. Lin;Lianshan Wang;S. Chua
中科院分区：
文献类型：
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作者：
S. Vicknesh;S. Tripathy;V. K. Lin;Lianshan Wang;S. Chua
作者演示了使用干释放技术来实现深底切GaN基微盘结构的硅平台支持。通过对底层硅材料进行基于XeF2的干法蚀刻，在具有大空气间隙的硅柱上制造不同尺寸的微盘结构。通过高光谱分辨率显微拉曼成像研究了这些微圆盘中残余应力的变化。这种制造技术可以有效地提高硅衬底上GaN基微盘发光二极管的光提取效率。
The authors demonstrate the use of a dry releasing technique to achieve deeply undercut GaN-based microdisk structures supported by silicon platforms. Varying dimensions of microdisk structures on silicon posts with large air gaps are fabricated by a XeF2-based dry etching of the underlying silicon material. The residual stress variation in these microdisks is studied by high spectral resolution micro-Raman mapping. Such a fabrication technique may effectively improve the light extraction efficiency from GaN-based microdisk light emitting diodes on silicon substrates.