Low loss shallow-ridge silicon waveguides
Low loss shallow-ridge silicon waveguides
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DOI：
10.1364/oe.18.014474
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发表时间：
2010-07-05
期刊：
影响因子：
3.8
通讯作者：
Asghari, Mehdi
中科院分区：
文献类型：
--
作者：
Dong, Po;Qian, Wei;Asghari, Mehdi
我们展示了低损耗浅脊硅波导，在C波段（1530 nm - 1565 nm）的平均传播损耗为0.274 +/- 0.008 dB/cm。这些波导具有0.25 μ m × 2 μ m的横截面，并通过标准光刻和干法蚀刻制造。我们还研究了一种紧凑的双级锥形，它将光从这些波导耦合到硅带波导，使其能够紧密弯曲。(C)2010年美国光学学会
We demonstrate low loss shallow-ridge silicon waveguides with an average propagation loss of 0.274 +/- 0.008 dB/cm in the C-band (1530 nm - 1565 nm). These waveguides have a cross section of 0.25 mu m by 2 mu m and are fabricated by standard photolithography and dry etching. We also investigate a compact double-level taper which adiabatically couples light from these waveguides to silicon strip waveguides enabling tight bends. (C) 2010 Optical Society of America